IndiumV3, Chine, Analysis, bibRecord, 000223

Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer

Identifieur interne : 000223 ( Chine/Analysis ); précédent : 000222; suivant : 000224

Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer

Auteurs : RBID : Pascal:13-0216861

Descripteurs français

Pascal (Inist)
- Effet photovoltaïque, Addition étain, Centre donneur, Cellule solaire organique, Couche interfaciale, Couche ITO, Conversion énergie, Taux conversion, Facteur remplissage, Epaisseur couche, Orbitale frontière, Travail sortie, Couche double, Système tampon, Mobilité trou, Hétérostructure, Oxyde d'indium, Anode, Phtalocyanine métallique, Complexe de cuivre, Fullerènes, Couche tampon, Dérivé du cyclohexane, Complexe fluoro, Cyclohexane, Interface, Matériau dopé, 8105T, 7330, ITO, C60, Couche de transport d'électrons, Couche de transport de trous.

English descriptors

KwdEn :
- Anode, Buffer layer, Buffer system, Conversion rate, Copper complex, Cyclohexane, Cyclohexane derivatives, Donor center, Doped materials, Double layers, Electron transport layer, Energy conversion, Fill factor, Fluoro complex, Frontier orbital, Fullerenes, Heterostructures, Hole mobility, Hole transport layer, ITO layers, Indium oxide, Interface, Interfacial layer, Layer thickness, Metallophthalocyanine, Organic solar cells, Photovoltaic effect, Tin addition, Work function.

Abstract

We have fabricated an improved organic photovoltaic (OPV) cell in which organic hetero-interface layer is inserted between indium-tin-oxide (ITO) anode and copper-phthalocyanine (CuPc) donor layer in the conventional OPV cell of ITO/CuPc/fullerene (C₆₀)/ bathophenanthroline (Bphen)/Al to enhance the power conversion efficiency (PCE) and fill factor (FF). The inserted ITO-buffer layer consists of electron-transporting layer (ETL) and hole-transporting layer (HTL). We have changed the ETL and HTL materials variously and also changed their layer thickness variously. It is confirmed that ETL materials with higher LUMO level than the work function of ITO give low PCE and FF. All the double layer buffers give higher PCE than a single layer buffer of TAPC. The highest PCE of 1.67% and FF of 0.57% are obtained from an ITO buffer consisted of 3 nm thick ETL of hexadecafkluoro-copper-phthalocyanine (F₁₆CuPc) and 3 nm thick HTL of 1,1-bis-(4-methyl-phenyl)-aminophenyl-cyclohexane (TAPC). This PCE is 1.64 times higher than PCE of the cell without ITO buffer and 2.98 times higher than PCE of the cell with single layer ITO buffer of TAPC. PCE is found to increase with increasing energy difference (ΔE) between the HOMO level of HTL and LUMO level of F₁₆CuPc in a range of ΔE < 0.6 eV. From the ΔE dependence of PCE, it is suggested that electrons moved from ITO to the LUMO level of the electron-transporting F_16- CuPc are recombined, at the F₁₆CuPc/HTL-interface, with holes transported from CuPc to the HOMO level of HTL in the double layer ITO buffer ETL, leading to efficient extraction of holes photo-generated in CuPc donor layer.

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Pascal:13-0216861

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer</title>
<author><name>XINGWU YAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>BEI CHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>WENLIAN LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>ZISHENG SU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>TIANYOU ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>FANGMING JIN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>BO ZHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>FENG ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>DI FAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>YUAN GAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Tsuboi, Taiju" uniqKey="Tsuboi T">Taiju Tsuboi</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Faculty of Engineering, Kyoto Sangyo University</s1>
<s2>Kyoto 603-8555</s2>
<s3>JPN</s3>
<sZ>11 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kyoto 603-8555</wicri:noRegion>
</affiliation>
</author>
<author><name>JUNBO WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>HUAJUN PI</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Sinosteel Scie-tech Development Co. Ltd., 8-Haidian Street</s1>
<s2>Beijing 100080</s2>
<s3>CHN</s3>
<sZ>13 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>JIANZHUO ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="06"><s1>College of Science, Yanshan University</s1>
<s2>Qinhuangdao 066004</s2>
<s3>CHN</s3>
<sZ>14 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Qinhuangdao 066004</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0216861</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0216861 INIST</idno>
<idno type="RBID">Pascal:13-0216861</idno>
<idno type="wicri:Area/Main/Corpus">000B75</idno>
<idno type="wicri:Area/Main/Repository">000B37</idno>
<idno type="wicri:Area/Chine/Extraction">000223</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1566-1199</idno>
<title level="j" type="abbreviated">Org. electron. : (Print)</title>
<title level="j" type="main">Organic electronics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anode</term>
<term>Buffer layer</term>
<term>Buffer system</term>
<term>Conversion rate</term>
<term>Copper complex</term>
<term>Cyclohexane</term>
<term>Cyclohexane derivatives</term>
<term>Donor center</term>
<term>Doped materials</term>
<term>Double layers</term>
<term>Electron transport layer</term>
<term>Energy conversion</term>
<term>Fill factor</term>
<term>Fluoro complex</term>
<term>Frontier orbital</term>
<term>Fullerenes</term>
<term>Heterostructures</term>
<term>Hole mobility</term>
<term>Hole transport layer</term>
<term>ITO layers</term>
<term>Indium oxide</term>
<term>Interface</term>
<term>Interfacial layer</term>
<term>Layer thickness</term>
<term>Metallophthalocyanine</term>
<term>Organic solar cells</term>
<term>Photovoltaic effect</term>
<term>Tin addition</term>
<term>Work function</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet photovoltaïque</term>
<term>Addition étain</term>
<term>Centre donneur</term>
<term>Cellule solaire organique</term>
<term>Couche interfaciale</term>
<term>Couche ITO</term>
<term>Conversion énergie</term>
<term>Taux conversion</term>
<term>Facteur remplissage</term>
<term>Epaisseur couche</term>
<term>Orbitale frontière</term>
<term>Travail sortie</term>
<term>Couche double</term>
<term>Système tampon</term>
<term>Mobilité trou</term>
<term>Hétérostructure</term>
<term>Oxyde d'indium</term>
<term>Anode</term>
<term>Phtalocyanine métallique</term>
<term>Complexe de cuivre</term>
<term>Fullerènes</term>
<term>Couche tampon</term>
<term>Dérivé du cyclohexane</term>
<term>Complexe fluoro</term>
<term>Cyclohexane</term>
<term>Interface</term>
<term>Matériau dopé</term>
<term>8105T</term>
<term>7330</term>
<term>ITO</term>
<term>C60</term>
<term>Couche de transport d'électrons</term>
<term>Couche de transport de trous</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have fabricated an improved organic photovoltaic (OPV) cell in which organic hetero-interface layer is inserted between indium-tin-oxide (ITO) anode and copper-phthalocyanine (CuPc) donor layer in the conventional OPV cell of ITO/CuPc/fullerene (C<sub>60</sub>
)/ bathophenanthroline (Bphen)/Al to enhance the power conversion efficiency (PCE) and fill factor (FF). The inserted ITO-buffer layer consists of electron-transporting layer (ETL) and hole-transporting layer (HTL). We have changed the ETL and HTL materials variously and also changed their layer thickness variously. It is confirmed that ETL materials with higher LUMO level than the work function of ITO give low PCE and FF. All the double layer buffers give higher PCE than a single layer buffer of TAPC. The highest PCE of 1.67% and FF of 0.57% are obtained from an ITO buffer consisted of 3 nm thick ETL of hexadecafkluoro-copper-phthalocyanine (F<sub>16</sub>
CuPc) and 3 nm thick HTL of 1,1-bis-(4-methyl-phenyl)-aminophenyl-cyclohexane (TAPC). This PCE is 1.64 times higher than PCE of the cell without ITO buffer and 2.98 times higher than PCE of the cell with single layer ITO buffer of TAPC. PCE is found to increase with increasing energy difference (ΔE) between the HOMO level of HTL and LUMO level of F<sub>16</sub>
CuPc in a range of ΔE < 0.6 eV. From the ΔE dependence of PCE, it is suggested that electrons moved from ITO to the LUMO level of the electron-transporting F<sub>16-</sub>
 CuPc are recombined, at the F<sub>16</sub>
CuPc/HTL-interface, with holes transported from CuPc to the HOMO level of HTL in the double layer ITO buffer ETL, leading to efficient extraction of holes photo-generated in CuPc donor layer.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0>
</fA01>
<fA03 i2="1"><s0>Org. electron. : (Print)</s0>
</fA03>
<fA05><s2>14</s2>
</fA05>
<fA06><s2>7</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>XINGWU YAN</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BEI CHU</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>WENLIAN LI</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ZISHENG SU</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>TIANYOU ZHANG</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>FANGMING JIN</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>BO ZHAO</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>FENG ZHANG</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>DI FAN</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>YUAN GAO</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>TSUBOI (Taiju)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>JUNBO WANG</s1>
</fA11>
<fA11 i1="13" i2="1"><s1>HUAJUN PI</s1>
</fA11>
<fA11 i1="14" i2="1"><s1>JIANZHUO ZHU</s1>
</fA11>
<fA14 i1="01"><s1>State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics. Fine Mechanics, and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>12 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1>
<s2>Beijing 100039</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Faculty of Engineering, Kyoto Sangyo University</s1>
<s2>Kyoto 603-8555</s2>
<s3>JPN</s3>
<sZ>11 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Sinosteel Scie-tech Development Co. Ltd., 8-Haidian Street</s1>
<s2>Beijing 100080</s2>
<s3>CHN</s3>
<sZ>13 aut.</sZ>
</fA14>
<fA14 i1="06"><s1>College of Science, Yanshan University</s1>
<s2>Qinhuangdao 066004</s2>
<s3>CHN</s3>
<sZ>14 aut.</sZ>
</fA14>
<fA20><s1>1805-1810</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>27255</s2>
<s5>354000503035940160</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>33 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0216861</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have fabricated an improved organic photovoltaic (OPV) cell in which organic hetero-interface layer is inserted between indium-tin-oxide (ITO) anode and copper-phthalocyanine (CuPc) donor layer in the conventional OPV cell of ITO/CuPc/fullerene (C<sub>60</sub>
)/ bathophenanthroline (Bphen)/Al to enhance the power conversion efficiency (PCE) and fill factor (FF). The inserted ITO-buffer layer consists of electron-transporting layer (ETL) and hole-transporting layer (HTL). We have changed the ETL and HTL materials variously and also changed their layer thickness variously. It is confirmed that ETL materials with higher LUMO level than the work function of ITO give low PCE and FF. All the double layer buffers give higher PCE than a single layer buffer of TAPC. The highest PCE of 1.67% and FF of 0.57% are obtained from an ITO buffer consisted of 3 nm thick ETL of hexadecafkluoro-copper-phthalocyanine (F<sub>16</sub>
CuPc) and 3 nm thick HTL of 1,1-bis-(4-methyl-phenyl)-aminophenyl-cyclohexane (TAPC). This PCE is 1.64 times higher than PCE of the cell without ITO buffer and 2.98 times higher than PCE of the cell with single layer ITO buffer of TAPC. PCE is found to increase with increasing energy difference (ΔE) between the HOMO level of HTL and LUMO level of F<sub>16</sub>
CuPc in a range of ΔE < 0.6 eV. From the ΔE dependence of PCE, it is suggested that electrons moved from ITO to the LUMO level of the electron-transporting F<sub>16-</sub>
 CuPc are recombined, at the F<sub>16</sub>
CuPc/HTL-interface, with holes transported from CuPc to the HOMO level of HTL in the double layer ITO buffer ETL, leading to efficient extraction of holes photo-generated in CuPc donor layer.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F02</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C30</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A05T</s0>
</fC02>
<fC02 i1="05" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Effet photovoltaïque</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Photovoltaic effect</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Efecto fotovoltaico</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Centre donneur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Donor center</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Centro dador</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Cellule solaire organique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Organic solar cells</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Couche interfaciale</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Interfacial layer</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Capa interfacial</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Couche ITO</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>ITO layers</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Conversion énergie</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Energy conversion</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Conversión energética</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Taux conversion</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Conversion rate</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Factor conversión</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Facteur remplissage</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Fill factor</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Orbitale frontière</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Frontier orbital</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Orbital frontera</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Travail sortie</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Work function</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Función de trabajo</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Couche double</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Double layers</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Système tampon</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Buffer system</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Sistema amortiguador</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Mobilité trou</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Hole mobility</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Movilidad agujero</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>22</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Anode</s0>
<s5>24</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Anode</s0>
<s5>24</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Anodo</s0>
<s5>24</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Phtalocyanine métallique</s0>
<s5>25</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Metallophthalocyanine</s0>
<s5>25</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Ftalocianina metálica</s0>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Complexe de cuivre</s0>
<s5>26</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Copper complex</s0>
<s5>26</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Cobre complejo</s0>
<s5>26</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Fullerènes</s0>
<s5>27</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Fullerenes</s0>
<s5>27</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Couche tampon</s0>
<s5>28</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Buffer layer</s0>
<s5>28</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Capa tampón</s0>
<s5>28</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Dérivé du cyclohexane</s0>
<s5>29</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Cyclohexane derivatives</s0>
<s5>29</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Ciclohexano derivado</s0>
<s5>29</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Complexe fluoro</s0>
<s5>30</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Fluoro complex</s0>
<s5>30</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Complejo fluoro</s0>
<s5>30</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Cyclohexane</s0>
<s2>NK</s2>
<s5>31</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Cyclohexane</s0>
<s2>NK</s2>
<s5>31</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Ciclohexano</s0>
<s2>NK</s2>
<s5>31</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Interface</s0>
<s5>32</s5>
</fC03>
<fC03 i1="26" i2="X" l="ENG"><s0>Interface</s0>
<s5>32</s5>
</fC03>
<fC03 i1="26" i2="X" l="SPA"><s0>Interfase</s0>
<s5>32</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>46</s5>
</fC03>
<fC03 i1="27" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>46</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>8105T</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="29" i2="X" l="FRE"><s0>7330</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE"><s0>ITO</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>C60</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="32" i2="X" l="FRE"><s0>Couche de transport d'électrons</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="32" i2="X" l="ENG"><s0>Electron transport layer</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="33" i2="X" l="FRE"><s0>Couche de transport de trous</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fC03 i1="33" i2="X" l="ENG"><s0>Hole transport layer</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fN21><s1>203</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer
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Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer

Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer

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